Title :
SEE Tests of the NAND Flash Radiation Tolerant Intelligent Memory Stack
Author :
M. Bagatin;S. Gerardin;A. Paccagnella;C. Sellier;P. X. Wang;V. Ferlet-Cavrios;C. Poivey
Author_Institution :
Dipt. di Ing. dell´Inf., Univ. di Padova, Padua, Italy
fDate :
7/1/2015 12:00:00 AM
Abstract :
The NAND Flash Radiation-Tolerant Intelligent Memory Stack (RTIMS FLASH) was developed to allow designers of space applications to take advantage of the large density offered by Commercial-Off-The-Shelf NAND Flash, without having to deal with radiation-induced upsets and high-current events. It can be configured in three operating modes, offering different trade-offs in terms of upset protection vs memory size. The effectiveness of the RTIMS Flash was tested during two test campaigns at the Heavy Ion Facility, in Louvain-la-Neuve, Belgium.
Keywords :
"Flash memories","Application specific integrated circuits","Radiation effects","Registers","Tunneling magnetoresistance","Ions","Performance evaluation"
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN :
978-1-4673-7641-9
DOI :
10.1109/REDW.2015.7336732