DocumentCode :
3697292
Title :
Single-Event Characterization of the 20 nm Xilinx Kintex UltraScale Field-Programmable Gate Array under Heavy Ion Irradiation
Author :
David S. Lee;Gregory R. Allen;Gary Swift;Matthew Cannon;Michael Wirthlin;Jeffrey S. George;Rokutaro Koga;Kangsen Huey
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
6
Abstract :
This study examines the single-event response of the Xilinx 20 nm Kintex UltraScale Field-Programmable Gate Array irradiated with heavy ions. Results for single-event latch-up and single-event upset on configuration SRAM cells and Block RAM memories are provided.
Keywords :
"Random access memory","Testing","Field programmable gate arrays","Radiation effects","Monitoring","Ions","Protons"
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN :
978-1-4673-7641-9
Type :
conf
DOI :
10.1109/REDW.2015.7336736
Filename :
7336736
Link To Document :
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