DocumentCode
3697292
Title
Single-Event Characterization of the 20 nm Xilinx Kintex UltraScale Field-Programmable Gate Array under Heavy Ion Irradiation
Author
David S. Lee;Gregory R. Allen;Gary Swift;Matthew Cannon;Michael Wirthlin;Jeffrey S. George;Rokutaro Koga;Kangsen Huey
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2015
fDate
7/1/2015 12:00:00 AM
Firstpage
1
Lastpage
6
Abstract
This study examines the single-event response of the Xilinx 20 nm Kintex UltraScale Field-Programmable Gate Array irradiated with heavy ions. Results for single-event latch-up and single-event upset on configuration SRAM cells and Block RAM memories are provided.
Keywords
"Random access memory","Testing","Field programmable gate arrays","Radiation effects","Monitoring","Ions","Protons"
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN
978-1-4673-7641-9
Type
conf
DOI
10.1109/REDW.2015.7336736
Filename
7336736
Link To Document