Title :
Total Ionizing Dose Radiation Effects on 14 nm FinFET and SOI UTBB Technologies
Author :
Harold Hughes;Patrick McMarr;Michael Alles;Enxia Zhang;Charles Arutt;Bruce Doris;Derrick Liu;Richard Southwick;Philip Oldiges
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
7/1/2015 12:00:00 AM
Abstract :
14 nm technology node bulk silicon FinFETs and SOI FinFETs and 14 nm SOI Ultra-Thin-Body and BOX nFETs were irradiated under bias using a 10 keV X-ray source. Irradiation resulted in significant changes in the threshold voltages of the SOI devices and large changes in the off-state current of the bulk FinFETs.
Keywords :
"FinFETs","Radiation effects","Logic gates","Threshold voltage","Silicon","Current-voltage characteristics"
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2015 IEEE
Print_ISBN :
978-1-4673-7641-9
DOI :
10.1109/REDW.2015.7336740
