An improved unipolar CMOS with elevated body and spacer for low-power application

In this paper, we present a novel non-classical NMOS transistor with elevated body and spacer to replace the conventional PMOS for CMOS circuits. By calibrating the parameters from the real measurement for the simulations, the novel non-classical NMOS transistor shows a PMOS-like behavior. The proposed unipolar CMOS can reduce the propagation delay time (TP) and power dissipation (PD). The simulation results show that the TP and PD of the unipolar CMOS circuit are 46% and 20% lower than the conventional CMOS inverter. It has been confirmed that the proposed unipolar CMOS can work well for all NOR logic gates, NAND logic gates, ring oscillator and static random-access memory (SRAM) under 0.5V power supply. Thus, the unipolar CMOS is expected as a candidate for low-power application in near future CMOS technology.