Title :
An ultra-low-power low-noise amplifier in 45nm SOI CMOS for portable EEG applications
Author_Institution :
Sensors and Electron Devices Directorate, US Army Research Laboratory, Adelphi, MD, USA
Abstract :
There is a great demand for technologies that enable researchers to be able to measure “real-world” brain activity, i.e., activity recorded outside a clinical setting, such as would be required for portable brain-machine-interfaces (BMI). Presently, power is a major limiting factor to be able to conduct experiments outside a laboratory setting, either from restrictions due to the size and weight of the batteries or by requiring subjects to maintain and replace batteries, drastically limiting the usability of the systems.
Keywords :
"Transistors","Electroencephalography","Choppers (circuits)","Low-noise amplifiers","1f noise","Gain","CMOS integrated circuits"
Conference_Titel :
Energy Efficient Electronic Systems (E3S), 2015 Fourth Berkeley Symposium on
DOI :
10.1109/E3S.2015.7336815