• DocumentCode
    3697871
  • Title

    InP HBT/GaN HEMT/Si CMOS heterogeneous integrated Q-band VCO-amplifier chain

  • Author

    Yi-Cheng Wu;Monte Watanabe;Tim LaRocca

  • Author_Institution
    Northrop Grumman Aerospace Systems, Redondo Beach, CA, 90278, United States
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    39
  • Lastpage
    42
  • Abstract
    A Q-band DAHI (Diverse Accessible Heterogeneous Integration) multi-technology VCO-amplifier chain is presented. The DAHI integration process is composed of InP HBT, GaN HEMT and 65nm CMOS. The InP VCO demonstrated 2GHz of tuning range at 35GHz while the GaN amplifier provides 15dB gain.
  • Keywords
    "Gallium nitride","CMOS integrated circuits","Indium phosphide","III-V semiconductor materials","Voltage-controlled oscillators","Tuning","Heterojunction bipolar transistors"
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/RFIC.2015.7337699
  • Filename
    7337699
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3697871