Title :
InP HBT/GaN HEMT/Si CMOS heterogeneous integrated Q-band VCO-amplifier chain
Author :
Yi-Cheng Wu;Monte Watanabe;Tim LaRocca
Author_Institution :
Northrop Grumman Aerospace Systems, Redondo Beach, CA, 90278, United States
fDate :
5/1/2015 12:00:00 AM
Abstract :
A Q-band DAHI (Diverse Accessible Heterogeneous Integration) multi-technology VCO-amplifier chain is presented. The DAHI integration process is composed of InP HBT, GaN HEMT and 65nm CMOS. The InP VCO demonstrated 2GHz of tuning range at 35GHz while the GaN amplifier provides 15dB gain.
Keywords :
"Gallium nitride","CMOS integrated circuits","Indium phosphide","III-V semiconductor materials","Voltage-controlled oscillators","Tuning","Heterojunction bipolar transistors"
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE
DOI :
10.1109/RFIC.2015.7337699
