DocumentCode :
3697873
Title :
A 130nm RFSOI technology with switch, LNA, and EDNMOS devices for integrated front-end module SoC applications
Author :
Raj Verma Purakh;Shaoqiang Zhang;Rui Tze Toh;Jen Shuang Wong;Gao Wei;Kok Wai Chew;Rajesh Nair;David Harame;Josef Watts;Thomas Mckay
Author_Institution :
Globalfoundries, 60 Woodlands Industrial Park-D, Street-2, Singapore-738406
fYear :
2015
fDate :
5/1/2015 12:00:00 AM
Firstpage :
47
Lastpage :
50
Abstract :
The cellular frequency spectrum has become increasingly complex with over 50 frequencies in LTE standards. To reduce costs in the front end module the switch has migrated from a III–V PHEMT base to a silicon solution in RFSOI. While many providers have focused on a 180nm base technology node for the RFSOI there has been an increasing move to more advanced nodes to solution the logic requirements of the cellular standards. In addition there has been a strong interest in migrating to an SOC solution in RFSOI. In this paper a 130nm RFSOI technology is presented with high performance and low noise body tied 1.5V NMOS for LNA devices with a novel method of body contacting, low Ron*Coff NMOS for antenna switch and state of the art EDNMOS with fT of 38GHz and BVdss of 14V BVdss for integrated PA application. Specific results presented include characterization of the switch, LNA, and Power Amplifier devices.
Keywords :
"Switches","Radio frequency","Performance evaluation","CMOS integrated circuits","Transistors","Logic gates","Silicon"
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE
Type :
conf
DOI :
10.1109/RFIC.2015.7337701
Filename :
7337701
Link To Document :
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