• DocumentCode
    3697874
  • Title

    High resolution thermal characterization of a GaAs MMIC

  • Author

    Dustin Kendig;Kazuaki Yazawa;Ali Shakouri

  • Author_Institution
    Microsanj LLC., USA
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    51
  • Lastpage
    54
  • Abstract
    We present the high resolution thermal characterization of a GaAs MMIC. The thermal imaging technique provides sub-microsecond temporal and sub-micron spatial resolutions. The results show that the gate area heats up in less than 3 us, much faster than the other area of the transistor. Also, the thermal cross talk between transistor arrays takes place in 100s us. This imaging method revealed unique thermal characteristics, not previously observed with traditional thermal measurement techniques.
  • Keywords
    "Temperature measurement","Temperature","Logic gates","Transistors","Imaging","MMICs","Spatial resolution"
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/RFIC.2015.7337702
  • Filename
    7337702
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3697874