DocumentCode :
3697890
Title :
A dual-band E-band quadrature VCO with switched coupled transformers in 28nm HPM bulk CMOS
Author :
M. Vigilante;P. Reynaert
Author_Institution :
KU Leuven, Belgium
fYear :
2015
fDate :
5/1/2015 12:00:00 AM
Firstpage :
119
Lastpage :
122
Abstract :
This paper presents a quadrature VCO (QVCO) that employs gate-to-drain transformers to couple two fundamental oscillators to generate accurate quadrature phases and switched coupled inductors for tuning extension. Thanks to these techniques, it is possible to cover two bands with a single quadrature VCO, without jeopardizing phase noise or demanding extensive silicon area. The oscillator, realized in 28nm HPM bulk CMOS, occupies a core area of only 0.031mm2 and is tunable from 71-to-76GHz and 85.6-to-90.7GHz, resulting in a total tuning range of 9.8GHz. The peak phase noise at 10MHz offset from the carrier is - 117.7dBc/Hz in the lower band and −110dBc/Hz in the higher one and varies less than 3.5dB within each sub-band. The maximum phase error is 1.5° and 3.5° in the lower and higher band respectively.
Keywords :
"Tuning","CMOS integrated circuits","Phase noise","Voltage-controlled oscillators","Inductors","Switches"
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE
Type :
conf
DOI :
10.1109/RFIC.2015.7337719
Filename :
7337719
Link To Document :
بازگشت