DocumentCode :
3697893
Title :
A highly integrated multiband LTE SiGe power amplifier for envelope tracking
Author :
Yan Li;Jeffery Ortiz;Eddie Spears
Author_Institution :
Qorvo Inc, Phoenix, AZ, USA
fYear :
2015
fDate :
5/1/2015 12:00:00 AM
Firstpage :
131
Lastpage :
134
Abstract :
This paper presents a highly integrated SiGe power amplifier (PA) for multiband long-term evolution (LTE). Two different harmonic loadings are investigated for the PA to achieve the optimized efficiencies for the envelope tracking (ET) and average power tracking (APT), respectively. By adopting the proper PA structure, our ET PA delivers >39% overall power-added efficiency (PAE) at the maximum output power (Pout) of 26.5 dBm with ACLREUTRA below −42 dB and EVM below 1% for the LTE QPSK 10 MHz at 699–716 MHz, 824–915 MHz and 1710–1980 MHz. At the back-off more than 5 dB below the maximum Pout, the ET PA is reconfigured to APT for remaining high overall PAE and linearity across a broad Pout range.
Keywords :
"Modulation","Silicon germanium","Gain","Power amplifiers","Harmonic analysis","Linearity","Switches"
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE
Type :
conf
DOI :
10.1109/RFIC.2015.7337722
Filename :
7337722
Link To Document :
بازگشت