DocumentCode :
36979
Title :
Measurements of Process Variability in 40-nm Regular and Nonregular Layouts
Author :
Mauricio, J. ; Moll, Francesc ; Gomez, Sergio
Author_Institution :
Dept. of Electron. Eng., High-Performance IC Design Group, Univ. Politec. de Catalunya, Barcelona, Spain
Volume :
61
Issue :
2
fYear :
2014
fDate :
Feb. 2014
Firstpage :
365
Lastpage :
371
Abstract :
As technology scales down, IC design is becoming more difficult due to the increase in process variations, which translates into a dispersion of circuit parameter values thus degrading manufacturing yield. Regular layouts are recommended to reduce variability with the cost of area overhead with respect to conventional layouts. The aim of this paper is to measure the impact of variability in two implementations of the same circuit in a commercial 40-nm technology: 1) a regular layout style and a compact and 2) nonregular layout. Experimental results show a 60% reduction in variability with a cost of 60% area overhead.
Keywords :
CMOS integrated circuits; integrated circuit layout; IC design; integrated circuit design; nonregular layout; process variability; regular layout; size 40 nm; Delays; Layout; Multiplexing; Oscilloscopes; Semiconductor device measurement; Transistors; Voltage measurement; Lithography distortion; variability;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2294742
Filename :
6691935
Link To Document :
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