• DocumentCode
    3697914
  • Title

    A wideband 60 GHz class-E/F2 power amplifier in 40nm CMOS

  • Author

    Masoud Babaie;Robert Bogdan Staszewski;Luca Galatro;Marco Spirito

  • Author_Institution
    Delft University of Technology, The Netherlands
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    215
  • Lastpage
    218
  • Abstract
    This paper presents a fully integrated 60 GHz power amplifier in 40nm CMOS that reaches the highest reported product of power-added efficiency and bandwidth. It is achieved through low/moderate coupling-factor transformers in the preliminary stages and a proper second harmonic termination of the output stage, such that it can operate as a class-E/F2 switched-mode PA at the saturation point. The three-stage PA delivers 17.9dBm saturated output power with 20% peak PAE. It demonstrates a bandwidth of 9.7 GHz with a peak gain of 21.6 dB.
  • Keywords
    "Transistors","CMOS integrated circuits","Switching circuits","Oscillators","Frequency modulation","Impedance matching","Switches"
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/RFIC.2015.7337743
  • Filename
    7337743
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3697914