• DocumentCode
    3697940
  • Title

    A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration

  • Author

    J.-O. Plouchart;F. Wang;A. Balteanu;B. Parker;M. A. T. Sanduleanu;M. Yeck;V. H.-C. Chen;W. Woods;B. Sadhu;A. Valdes-Garcia;X. Li;D. Friedman

  • Author_Institution
    IBM T. J. Watson Research Center, Yorktown Heights, NY, USA
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    319
  • Lastpage
    322
  • Abstract
    A self-healing mmWave SoC integrating an 8052 microcontroller with 12kB of memory, an ADC, a temperature sensor, and a 3-stage cascode 60GHz LNA, implemented in a 32nm SOI CMOS technology exhibits a peak gain of 21dB, an average 3.3dB NF from 53 to 62GHz and 18mW power consumption. An indirect NF sensing algorithm was implemented on the integrated uC, which enables an adaptive biasing algorithm to reduce the 60GHz NF sigma and LNA power consumption by 37 and 40%, respectively, across P,V,T.
  • Keywords
    "Noise measurement","Temperature measurement","Current measurement","Semiconductor device measurement","Voltage measurement","Transmission line measurements","Sensors"
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/RFIC.2015.7337769
  • Filename
    7337769