DocumentCode
3697940
Title
A 18mW, 3.3dB NF, 60GHz LNA in 32nm SOI CMOS technology with autonomic NF calibration
Author
J.-O. Plouchart;F. Wang;A. Balteanu;B. Parker;M. A. T. Sanduleanu;M. Yeck;V. H.-C. Chen;W. Woods;B. Sadhu;A. Valdes-Garcia;X. Li;D. Friedman
Author_Institution
IBM T. J. Watson Research Center, Yorktown Heights, NY, USA
fYear
2015
fDate
5/1/2015 12:00:00 AM
Firstpage
319
Lastpage
322
Abstract
A self-healing mmWave SoC integrating an 8052 microcontroller with 12kB of memory, an ADC, a temperature sensor, and a 3-stage cascode 60GHz LNA, implemented in a 32nm SOI CMOS technology exhibits a peak gain of 21dB, an average 3.3dB NF from 53 to 62GHz and 18mW power consumption. An indirect NF sensing algorithm was implemented on the integrated uC, which enables an adaptive biasing algorithm to reduce the 60GHz NF sigma and LNA power consumption by 37 and 40%, respectively, across P,V,T.
Keywords
"Noise measurement","Temperature measurement","Current measurement","Semiconductor device measurement","Voltage measurement","Transmission line measurements","Sensors"
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits Symposium (RFIC), 2015 IEEE
Type
conf
DOI
10.1109/RFIC.2015.7337769
Filename
7337769
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