Title :
Hexadecimal to binary conversion using multi-input floating gate complementary metal oxide semiconductors
Author :
Hassan Amine Osseily;Ali Massoud Haidar
Author_Institution :
Department of Electrical Engineering, Lebanese International University, Beirut, Lebanon
Abstract :
Multiple-input floating gate MIFG-MOSFETs and Floating Gate Potential Diagrams FPD used for conversion of quaternary-valued input, octal-valued input and hexadecimal into corresponding binary-valued output in CMOS integrated circuit design environment. The method is demonstrated through the design of a circuit for conversion of octal into the corresponding binary bits (binary 000–111) and for conversion of hexadecimal into the corresponding binary bits (binary 0000–1111) in a standard 1.5µm digital CMOS technology. The conversion method is simple and compatible with the present CMOS process.
Keywords :
"Inverters","Logic gates","CMOS integrated circuits","Capacitors","Switches","Threshold voltage","Electric potential"
Conference_Titel :
Applied Research in Computer Science and Engineering (ICAR), 2015 International Conference on
DOI :
10.1109/ARCSE.2015.7338134