• DocumentCode
    3698497
  • Title

    A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing

  • Author

    John DeBrosse;Thomas Maffitt;Yutaka Nakamura;Guenole Jan;Po-Kang Wang

  • Author_Institution
    IBM Research Division, Essex Junction, VT, USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Spin Transfer Torque Magnetoresistive RAM (STT MRAM) has uniquely attractive write performance and endurance characteristics. Nonetheless, little STT MRAM circuit hardware data has been published [1-4]. This paper describes a fully-functional 90nm 8Mb STT MRAM, identifies and describes solutions to the primary circuit challenges, and includes considerable circuit hardware data.
  • Keywords
    "Arrays","Magnetic tunneling","Random access memory","Error correction codes","Field effect transistors","Microprocessors"
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference (CICC), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/CICC.2015.7338359
  • Filename
    7338359
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3698497