Title :
A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing
Author :
John DeBrosse;Thomas Maffitt;Yutaka Nakamura;Guenole Jan;Po-Kang Wang
Author_Institution :
IBM Research Division, Essex Junction, VT, USA
Abstract :
Spin Transfer Torque Magnetoresistive RAM (STT MRAM) has uniquely attractive write performance and endurance characteristics. Nonetheless, little STT MRAM circuit hardware data has been published [1-4]. This paper describes a fully-functional 90nm 8Mb STT MRAM, identifies and describes solutions to the primary circuit challenges, and includes considerable circuit hardware data.
Keywords :
"Arrays","Magnetic tunneling","Random access memory","Error correction codes","Field effect transistors","Microprocessors"
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2015 IEEE
DOI :
10.1109/CICC.2015.7338359
