Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon

Author

Raine, M. ; Goiffon, Vincent ; Paillet, P. ; Duhamel, O. ; Girard, S. ; Gaillardin, M. ; Virmontois, Cedric ; Belloir, Jean-Marc ; Richard, N. ; Magnan, Pierre

Author_Institution

DAM, DIF, Arpajon, France

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

2826

Lastpage

2833

Abstract

An experimental method using a CMOS image sensor as test device is used to study the kinetics of formation and annealing of Single Particle Displacement Damage (SPDD) events in arrays of silicon microvolumes. The dark current level is monitored in real time under neutron irradiation, allowing to detect SPDD events and follow their subsequent annealing behavior. Both short term and long term annealing results are presented, with recordings from 75 ms to 4.5 days after SPDD events, performed with different integration times. A majority of pixels exhibits a continuous logarithmic relaxation; a selection of particular cases is finally presented, corresponding to pixels exhibiting Random Telegraph Signals.

Keywords

CMOS image sensors; annealing; radiation hardening (electronics); CMOS image sensor; SPDD events; annealing; continuous logarithmic relaxation; dark current level; neutron irradiation; random telegraph signals; silicon microvolumes arrays; single particle displacement damage events; time 75 ms to 4.5 day; Active pixel sensors; Annealing; CMOS image sensors; Dark current; Neutrons; Radiation effects; Active pixel sensor (APS); CMOS image sensor (CIS); annealing; dark current distribution; neutrons; random telegraph signal (RTS); single-particle displacement damage (SPDD);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2364397

Filename

6953317