DocumentCode :
3699153
Title :
Independent bad block management for mass storage flash memory arrays
Author :
Yongfeng Ma;Hanping Du;Shaobo Yang
Author_Institution :
School of Information and Electronics, Beijing Institute of Technology, Beijing, China
fYear :
2015
Firstpage :
388
Lastpage :
391
Abstract :
As flash memory has advantages of high data throughput, high storage density, low power consumption and low cost, it has been widely used in the applications of high speed data acquisition and massive data storage. However, the flash chip generates bad blocks during its service life, which leads to the loss of data. Hence a bad block management in the system of flash memory array is essential to ensure the reliability of the data. The bad block management affects the storage capacity utilization, which is the main factor of the service life of the storage array. This paper introduces a new bad block management, in which each flash chip in the array has a corresponding bad block table. The computer simulation shows that the proposed scheme can improve the capacity utilization according to the size of the array.
Keywords :
"Flash memories","Arrays","Nonvolatile memory","Logic gates","Substrates","Pipelines","Solids"
Publisher :
ieee
Conference_Titel :
Software Engineering and Service Science (ICSESS), 2015 6th IEEE International Conference on
ISSN :
2327-0586
Print_ISBN :
978-1-4799-8352-0
Electronic_ISBN :
2327-0594
Type :
conf
DOI :
10.1109/ICSESS.2015.7339081
Filename :
7339081
Link To Document :
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