• DocumentCode
    3699153
  • Title

    Independent bad block management for mass storage flash memory arrays

  • Author

    Yongfeng Ma;Hanping Du;Shaobo Yang

  • Author_Institution
    School of Information and Electronics, Beijing Institute of Technology, Beijing, China
  • fYear
    2015
  • Firstpage
    388
  • Lastpage
    391
  • Abstract
    As flash memory has advantages of high data throughput, high storage density, low power consumption and low cost, it has been widely used in the applications of high speed data acquisition and massive data storage. However, the flash chip generates bad blocks during its service life, which leads to the loss of data. Hence a bad block management in the system of flash memory array is essential to ensure the reliability of the data. The bad block management affects the storage capacity utilization, which is the main factor of the service life of the storage array. This paper introduces a new bad block management, in which each flash chip in the array has a corresponding bad block table. The computer simulation shows that the proposed scheme can improve the capacity utilization according to the size of the array.
  • Keywords
    "Flash memories","Arrays","Nonvolatile memory","Logic gates","Substrates","Pipelines","Solids"
  • Publisher
    ieee
  • Conference_Titel
    Software Engineering and Service Science (ICSESS), 2015 6th IEEE International Conference on
  • ISSN
    2327-0586
  • Print_ISBN
    978-1-4799-8352-0
  • Electronic_ISBN
    2327-0594
  • Type

    conf

  • DOI
    10.1109/ICSESS.2015.7339081
  • Filename
    7339081