• DocumentCode
    3699792
  • Title

    GaAs nanostructures on Si platform

  • Author

    S. Sanguinetti;S. Bietti;D. Scarpellini;A. Ballabio;L. Miglio;G. Isella;L. Esposito;J. Frigerio;A. Fedorov;M. Gurioli;F. Biccari;M. Abbarchi;A. Vinattieri

  • Author_Institution
    L-NESS and Dipartimento di Scienza dei Materiali, Universit? di Milano Bicocca, Italy
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.
  • Keywords
    "Silicon","Substrates","Gallium arsenide","Nanostructures","Photonics","Quantum dots","Fabrication"
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2015
  • Electronic_ISBN
    2166-8892
  • Type

    conf

  • DOI
    10.1109/OECC.2015.7340229
  • Filename
    7340229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3699792