• DocumentCode
    3699794
  • Title

    Low-operating-energy membrane-buried heterostructure lasers on SiO2/Si Substrate

  • Author

    Shinji Matsuo;Takuro Fujii;Koji Takeda

  • Author_Institution
    NTT Device Technology Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Membrane-buried heterostructure lasers are integrated on SiO2/Si substrate by using a direct bonding technique. The large optical confinement factor leads to ultralow operating energy, which is critical for the datacom and computercom networks.
  • Keywords
    "Substrates","Silicon","Fabrication","Indium phosphide","III-V semiconductor materials","Photonics","Optical signal processing"
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2015
  • Electronic_ISBN
    2166-8892
  • Type

    conf

  • DOI
    10.1109/OECC.2015.7340231
  • Filename
    7340231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3699794