• DocumentCode
    3699895
  • Title

    A 92GHz bandwidth SiGe BiCMOS HBT TIA with less than 6dB noise figure

  • Author

    K. Vasilakopoulos;S. P. Voinigescu;P. Schvan;P. Chevalier;A. Cathelin

  • Author_Institution
    ECE Department, University of Toronto Toronto, ON M5S 3G4, Canada
  • fYear
    2015
  • Firstpage
    168
  • Lastpage
    171
  • Abstract
    A low-noise, broadband amplifier with resistive degeneration and transimpedance feedback is reported with 200 mVpp input linearity and less than 6 dB noise figure up to 88 GHz. The measured gain of 13 dB, noise figure, linearity, and group delay variation of ±1.5 ps are in excellent agreement with simulation. Eye diagram measurements were conducted up to 120 Gb/s and a dynamic range larger than 36 dB was obtained from eye diagram measurements at 40 Gb/s. The chip, which includes a 50Ω output buffer, occupies 0.138 mm2 and consumes 21 mA from a 2.3V supply.
  • Keywords
    "Heterojunction bipolar transistors","Silicon germanium","Bandwidth","Gain","Current density","BiCMOS integrated circuits","Broadband communication"
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/BCTM.2015.7340554
  • Filename
    7340554
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3699895