A 105-GHz, supply-scaled distributed amplifier in 90-nm SiGe BiCMOS

Distributed amplifiers (DAs) feature large bandwidth but relatively low gain and power efficiency. We present a supply-scaling technique to enhance the efficiency of a broadband DA. The presented eight-stage amplifier has a gain of 12 dB over a 3 dB bandwidth from 14-105 GHz and achieves peak output power of 17 dBm at 12.6% power-added efficiency (PAE) at 50 GHz. The DA is designed in a 90-nm SiGe BiCMOS process and occupies an area of 2.65 mm × 0.57 mm. Total dc power consumed is 297 mW.