DocumentCode
3699900
Title
SiGe HBT modeling for mm-wave circuit design
Author
Andreas Pawlak;Steffen Lehmann;Paulius Sakalas;Julia Krause;Klaus Aufinger;Bertrand Ardouin;Michael Schroter
Author_Institution
Technische Universitä
fYear
2015
Firstpage
149
Lastpage
156
Abstract
An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such as geometry scaling, substrate coupling and thermal effects as well as HICUM Level 2 features enabling the accurate modeling of the linear and non-linear characteristics of the latest generation of SiGe HBTs are discussed. Furthermore, experimental results for the most important DC and small-signal characteristics as well as selected examples for non-linear modeling of the most advanced SiGe HBTs from two different technologies are presented. Model verification issues related to limited on-wafer high-frequency measurement capability and the accurate calibration at multi-hundred GHz are briefly touched.
Keywords
"Integrated circuit modeling","Mathematical model","Substrates","Silicon germanium","Couplings","Heterojunction bipolar transistors"
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE
Type
conf
DOI
10.1109/BCTM.2015.7340560
Filename
7340560
Link To Document