Title :
QUBiC generation 9, a new BiCMOS process optimized for mmWave applications
Author :
Joost Melai;Peter Magnée;Ivo Pouwel;Pieter Weijs;Ihor Brunets;Rob van Dalen;Anurag Vohra;Luuk Tiemeijer;Ralf Pijper;Hans Tuinhout;Nicole Wils;Nicolae Cazana
Author_Institution :
NXP Semiconductors, Nijmegen, The Netherlands
Abstract :
QUBiC generation 9 is NXPs new BiCMOS platform process for high performance RF applications in the mmWave domain. We introduced a new MIM capacitor option and paid special attention to improving the RF noise performance of the HBTs. The extrinsic base resistance has been decreased by several methods, most importantly by self-alignment of the extrinsic base connection to the emitter. The new process is robust and manufacturable and it results in improved noise performance without significantly adding to process complexity. We present results from a discrete transistor that is brought to market to replace GaAs pHEMTs for Ku band LNA applications. The second example is a prototype LNA for the Ka band, NFmin improves with 0.3 dB to 2.5 dB at 30 GHz.
Keywords :
"Noise measurement","Resistance","Capacitors","Gallium arsenide","PHEMTs","Radio frequency"
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE
DOI :
10.1109/BCTM.2015.7340566