DocumentCode :
3699909
Title :
Analysis of residual errors due to calibration transfer in on-wafer measurements at mm-wave frequencies
Author :
L. Galatro;M. Spirito
Author_Institution :
Electronics Research Laboratory, Delft University of Technology, Mekelweg 4, 2628CD Delft, Netherlands
fYear :
2015
Firstpage :
141
Lastpage :
144
Abstract :
in this work we analyze, by means of 3D electromagnetic simulations, the accuracy limitations of mm-wave probe-level calibrations. The field coupling of the unshielded probe-wafer transition is the considered source of calibration inaccuracy when changing substrate between calibration and measurements. The problem of calibration transfer is first schematized in terms of error box analysis. After, EM simulations are used to assess the residual error associated to the calibration transfer. A method for error minimization is proposed, showing an improvement as high as 50% on measurement results (65% on simulations) when transferring the calibration from alumina (εr=3D9.6) to SiGe back-end-of-line (εr=3D4.1).
Keywords :
"Calibration","Probes","Substrates","Silicon compounds","Silicon germanium","Measurement uncertainty","Transmission line matrix methods"
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE
Type :
conf
DOI :
10.1109/BCTM.2015.7340569
Filename :
7340569
Link To Document :
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