DocumentCode :
3699910
Title :
A 47–217 GHz dynamic frequency divider in SiGe technology
Author :
Jidan Al-Eryani;Herbert Knapp;Hao Li;Klaus Aufinger;Jonas Wursthorn;Soran Majied;Linus Maurer
Author_Institution :
Universitä
fYear :
2015
Firstpage :
125
Lastpage :
128
Abstract :
A divide-by-2 dynamic frequency divider with a frequency operating range from 47 up to 217GHz, i.e. a bandwidth of 170GHz, in a 130nm SiGe BiCMOS process with cut-off frequency fT =3D250 GHz is presented. To the best of authors´ knowledge, this is the highest operating frequency and bandwidth reported so far in silicon. The divider is based on the regenerative frequency division principle followed by a buffer that can deliver ~-12.5dBm output power (no probe or waveguide/cable loss correction) at 217 GHz input frequency, which is sufficient to drive succeeding stages. The divider´s correct functionality over its entire operating frequency range is verified with lab measurements.
Keywords :
"Probes","Frequency measurement","Power generation","Bandwidth","Mixers","Silicon germanium"
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE
Type :
conf
DOI :
10.1109/BCTM.2015.7340570
Filename :
7340570
Link To Document :
بازگشت