Author :
Colin C. McAndrew
Author_Institution :
Freescale Semiconductor, Inc., Tempe, AZ 85284
Abstract :
Everyone knows that fT is the frequency “at which the current gain equals 1.” What is not commonly recognized is that while fT is a useful figure of merit for devices there is a significantly better way than this definition to conceptualize fT. In an overlooked 1969 paper Hermann Gummel proposed a different interpretation of fT for bipolar transistors. In this paper we generalize Gummel´s analysis and propose a device independent, simple, and intuitive definition of fT that is easy to both measure and simulate.
Keywords :
"Frequency measurement","Transistors","Voltage control","Transconductance","Integrated circuit modeling","Capacitance"
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE
DOI :
10.1109/BCTM.2015.7340573