Charge carrier transport in plasma polymerized glasses: Poly organosilicon films

Hole and electron transport processes in plasma-polymerized organosilicon films has been investigated by the time of flight method using pulsed electron beam technique. It was found that transport of carriers proceeds via a hopping mechanism. At a temperature about 270 K some changes of the activation energy of mobility and of dispersion parameters were observed. These changes seem to be connected with variation the density and energy distribution of hopping sites which can be related to phase transition.