• DocumentCode
    3700854
  • Title

    Surface charging of dielectrics by secondary emission and determination of emission yield

  • Author

    B. Gross;H. von Seggern;A. Berraissoul

  • Author_Institution
    Institute for Electroacoustics, Technical University of Darmstadt, Merckstrasse 25, D-6100 Darmstadt, Federal Republic of Germany
  • fYear
    1985
  • Firstpage
    608
  • Lastpage
    615
  • Abstract
    A new method for the determination of the secondary emission yield of dielectrics is discussed. Results are given for Teflon, Aclar, Kapton, and Mylar. Surfaces of dielectrics irradiated with electrons of energies above 2 keV become negatively charged. For lower energies the number of back-scattered primaries plus backward emitted secondaries eventually exceeds that of the incoming primaries. Then the surface can be positively charged [1]. It was recognized that this effect might lead to a simple method for the determination of the total backscatter plus secondary emission yield [2]. This effect is used to determine the total emission yield curve in one run with a single beam energy.
  • Keywords
    "Current measurement","Electrodes","Electric potential","Dielectrics","Backscatter","Electron beams","Dielectric measurement"
  • Publisher
    ieee
  • Conference_Titel
    Electrets (ISE 5), 1985 5th International Symposium on
  • Print_ISBN
    000-0-0000-0000-0
  • Type

    conf

  • DOI
    10.1109/ISE.1985.7341545
  • Filename
    7341545