• DocumentCode
    3703764
  • Title

    U-band pHEMT divide-by-three ILFD

  • Author

    Wei-Ling Chang;Chinchun Meng;Kuan-Chang Tsung;Guo-Wei Huang

  • Author_Institution
    Department of Electrical Engineering National Chiao Tung University Hsinchu 300, Taiwan
  • fYear
    2015
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    A fully integrated 0.15-μm AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) divide-by-three injection locked frequency divider (ILFD) with Marchand balun is demonstrated in this paper. The Marchand Balun provides broadband and balanced differential signals at millimeter wave frequencies due to the low loss GaAs semi-insulating substrate. The divide-by-three ILFD performs a locking range from 44 GHz to 47 GHz at the supply voltage of 6 V and the core current consumption is 6.24 mA.
  • Keywords
    "Frequency conversion","PHEMTs","Impedance matching","Heterojunction bipolar transistors","Substrates","Topology","Sensitivity"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2015 10th European
  • Type

    conf

  • DOI
    10.1109/EuMIC.2015.7345056
  • Filename
    7345056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3703764