A 70 GHz static dual-modulus frequency divider in SiGe BiCMOS technology

A 2/3 divider in a 130 nm SiGe BiCMOS technology is presented. Inductive shunt peaking was used to optimize the divider for high input frequencies. Two test circuits with and without input balun were manufactured for characterization at high and low input frequencies, respectively. The divider is functional for input frequencies up to 70 GHz and draws 20 mA from a 3.3 V supply. The circuit will enable high-performance frequency synthesizers at 120 GHz and above.