Robustness investigation by load pull measurement of industrial 0.25-μm AlGaN-GaN HEMTs

Limit of robustness of the GH25-10 has been investigated based on loadpull characterizations increasing step by step the Drain voltage and short term reliability tests. Up to 8W/mm at a drain voltage of 60V have been demonstrated without failure. 1hour RF life test time had been successfully carried out under these extremely enhanced conditions with no significant degradation. It is shown that the gate current is a major indicator for GaN based device degradation. Back simulations using the GH25-10 foundry non-linear model show a good agreement with the measurements assessing its prediction capability from 30V (safe operating area) to 60V.