DocumentCode :
3703813
Title :
Thermal performance assessment in AlGaN/GaN structures by microsensor integration
Author :
Osvaldo Arenas;?lias Al Alam;Ahmed Chakroun;Vincent Aimez;Abdelatif Jaouad;Richard Ares;Francois Boone;Hassan Maher
Author_Institution :
Laboratoire Nanotechnologies Nanosyst?mes (LN2) CNRS UMI-3463. Institut Interdisciplinaire d´Innovation Technologique (3IT), Universit? de Sherbrooke, Sherbrooke, J1K OA5, QC, Canada
fYear :
2015
Firstpage :
227
Lastpage :
230
Abstract :
The high power density in AlGaN/GaN High Electron Mobility Transistors (HEMTs) can notably produce strong self-heating in the device. This effect leads to performance degradation and reliability concerns. Thermal performance of the device is strongly dependent on the epitaxial structure and substrate material. This work puts into perspective the thermal performance of three devices with same dimensions, fabricated on different AlGaN/GaN structures. The evaluation is carried out by the integration of a temperature micro sensor located above the active region.
Keywords :
"Temperature measurement","Aluminum gallium nitride","Wide band gap semiconductors","Substrates","HEMTs","MODFETs","Gallium nitride"
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2015 10th European
Type :
conf
DOI :
10.1109/EuMIC.2015.7345110
Filename :
7345110
Link To Document :
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