A 25 W, 2.3 to 2.7 GHz wideband LDMOS two-stage RFIC power amplifier for driver and small-cell Doherty application

A 25 W, dual-path, two-stage wideband RFIC power transistor covering 2.3 to 2.7 GHz band and targeting driver and small-cell application has been developed using the latest generation of LDMOS technology. Design techniques used to achieve wideband, flat gain, compact footprint, and improved isolation are discussed. A class AB driver prototype achieved more than 30 dB gain from 2.1 to 2.8 GHz with a raw ACPR of -45 dBc and 18% efficiency. Also developed is a state-of-the-art wideband Doherty amplifier for small-cell that achieved 28.5 dB gain and better than 40% efficiency and -55 dBc corrected ACPR when driven with a 60 MHz LTE signal at 2.35 and 2.6 GHz.