Title :
Frequency-agile packaged GaN-HEMT using MIM thickfilm BST varactors
Author :
Sebastian Preis;Alex Wiens;Nikolai Wolff;Rolf Jakoby;Wolfgang Heinrich;Olof Bengtsson
Author_Institution :
Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, Gustav-Kirchoff-Strasse 4, 12489 Berlin, Germany
Abstract :
Nowadays wireless communication systems demand flexibility along with electrical efficiency. In this work the highly efficient GaN-HEMT technology is combined with electrically tunable Barium-Strontium-Titanate MIM varactors in parallel-plate configuration, resulting in a frequency-agile transistor module. An efficiency improvement of 19% within a tuning voltage range of 400 V was measured. Maximum CW rating is 44.4 dBm output power at 71.8% drain efficiency. Thermal cycling and modulated-signal measurements verified highly stable and linear operation.
Keywords :
"Varactors","Tuning","Transistors","Impedance","Radio frequency","Temperature measurement","Linearity"
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2015 10th European
DOI :
10.1109/EuMIC.2015.7345164
