• DocumentCode
    3704394
  • Title

    A 250 GHz hetero-integrated VCO with 0.7 mW output power in InP-on-BiCMOS technology

  • Author

    M. Hossain;N. Weimann;B. Janke;M. Lisker;C. Meliani;B. Tillack;O. Kr?ger;V. Krozer;W. Heinrich

  • Author_Institution
    Ferdinand-Braun-Institut (FBH), Leibniz-Institut f?r H?chstfrequenztechnik, 12489 Berlin
  • fYear
    2015
  • Firstpage
    391
  • Lastpage
    394
  • Abstract
    This paper presents a 250 GHz hetero-integrated VCO using InP-on-BiCMOS technology. It consists of a single-ended Colpitts Voltage Controlled Oscillator (VCO) in 0.25 μm SiGe-BiCMOS technology and a common-emitter based frequency tripler in 0.8 μm transferred-substrate (TS) InP-HBT technology, which are combined using a wafer-level BCB bonding process. The VCO operates at 83 GHz and the combined circuit delivers 0.7 mW output power at 250 GHz with 2% tuning range. This result documents recent advances of the hetero integrated process towards THz frequencies.
  • Keywords
    "Indium phosphide","III-V semiconductor materials","Voltage-controlled oscillators","BiCMOS integrated circuits","Power generation","Tuning","Heterojunction bipolar transistors"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2015 European
  • Type

    conf

  • DOI
    10.1109/EuMC.2015.7345782
  • Filename
    7345782
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3704394