A multilayer substrate integrated 3 dB power divider with embedded thick film resistor

A 3 dB power divider/combiner in substrate integrated waveguide (SIW) technology is presented. The divider consists of an E-plane SIW bifurcation with an embedded thick film resistor. The transition divides a full-height SIW into two SIWs of half the height. The resistor provides isolation between these two. The divider is fabricated in a multilayer process using high frequency substrates. For the resistor carbon paste is printed on the middle layer of the stack-up. Simulation and measurement results are presented. The measured divider exhibits an isolation of better than 22 dB within a bandwidth of more than 3GHz at 20 GHz.