DocumentCode :
3704435
Title :
A 20 Gbit/s, 280 GHz wireless transmission in InPHEMT based receiver module using flip-chip assembly
Author :
Yoichi Kawano;Hiroshi Matsumura;Shoichi Shiba;Masaru Sato;Toshihide Suzuki;Yasuhiro Nakasha;Tsuyoshi Takahashi;Kozo Makiyama;Taisuke Iwai;Naoki Hara
Author_Institution :
Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
fYear :
2015
Firstpage :
562
Lastpage :
565
Abstract :
In this paper, 20 Gbit/s, carrier frequency of a 280 GHz transmitter MMIC and a receiver module using a flip-chip assembly technique are described. The transmitter MMIC is comprised of an ON/OFF modulator and multi-stage amplifiers. The measured ON/OFF ratio in the 280 GHz frequency band is 15 dB. The LNA based on 75-nm InP-HEMT shows the small signal gain of more than 27 dB in the band, and the NF of 9.8 dB at 300 GHz. The detector for the ON/OFF keying (OOK) with a baseband amplifier has achieved the sensitivity of about 2.5 V/mW. The fabricated receiver MMIC is mounted on the module in the flip-chip assembly technique. The sensitivity of the receiver module is around 400 V/mW. The waveforms have clear eye openings, when the data transmission rates are 10 Gb/s and 20 Gb/s.
Keywords :
"MMICs","Receivers","Antenna measurements","Semiconductor device measurement","Flip-chip devices","Assembly","Gain"
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2015 European
Type :
conf
DOI :
10.1109/EuMC.2015.7345825
Filename :
7345825
Link To Document :
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