DocumentCode :
3704516
Title :
A Ku-band series/shunt switching type S/H IC for direct RF under sampling reception
Author :
Tomokazu Koizumi;Mizuki Motoyoshi;Daliso Banda;Osamu Wada;Suguru Kameda;Noriharu Suematsu;Tadashi Takagi;Kazuo Tsubouchi
Author_Institution :
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan
fYear :
2015
Firstpage :
897
Lastpage :
900
Abstract :
To reduce the size and the power consumption of receivers, direct RF under sampling reception has been developed. This reception method is applicable for satellite communication receivers, because the requirements of near-far resistance and spurious response can be relaxed from that of terrestrial wireless receivers. In this paper, we propose and demonstrate a Ku-band series/shunt switching type sample and hold (S/H) IC for very small aperture terminal (VSAT) RF under sampling receivers. The series/shunt configuration enables low RF signal leakage to the S/H output during hold period even in the high frequency range. To reduce to the loss of input stage of the S/H IC, parallel resonant inductor is attached to the shunt switch FET and on-chip matching circuit is employed for RF input port. The proposed S/H circuit is designed and fabricated in 90 nm CMOS process. The fabricated IC performs the |S11| of lower than -19dB and the signal-to-noise ratio (SNR) of higher than 34.9 dB at VSAT´s Ku-band (12.2-12.75GHz).
Keywords :
"Radio frequency","Signal to noise ratio","Bandwidth","Switches","Logic gates","CMOS integrated circuits"
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2015 European
Type :
conf
DOI :
10.1109/EuMC.2015.7345909
Filename :
7345909
Link To Document :
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