DocumentCode :
3704541
Title :
GaN Schottky diodes for RF wireless power detection and conversion
Author :
Timothy Boles;Gary Lopes
Author_Institution :
MACOM Technology Solutions, Lowell, MA 01851, USA
fYear :
2015
Firstpage :
1003
Lastpage :
1006
Abstract :
RF and microwave frequency GaN-on-Silicon high reverse breakdown voltage/high current handling Schottky diodes capable of being integrated into complex MMIC circuitry have been developed for application into wireless energy transmission systems. In the near future, these Schottky diode based MMICs will revolutionize power transmission and enable a 120 year old idea to become a practical reality.
Keywords :
"Schottky diodes","Gallium nitride","Anodes","Electric breakdown","Silicon","Wireless communication"
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2015 European
Type :
conf
DOI :
10.1109/EuMC.2015.7345935
Filename :
7345935
Link To Document :
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