DocumentCode
3704611
Title
Temperature insensitive PA bias circuit with digital control interface using InGaP/GaAs HBT technology
Author
Wei-Ling Chang;Chinchun Meng;Shyh-Chyi Wong;Hwey Chien;Guo-Wei Huang
Author_Institution
Department of Electrical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
fYear
2015
Firstpage
1283
Lastpage
1286
Abstract
This paper demonstrates a new temperature insensitive bias circuit using a Wilson current mirror for the InGaP/GaAs HBT power amplifier. The Wilson current mirror has a high impedance node for connecting an on/off digital interface and a stable voltage node for injection of feedback signals to achieve a temperature insensitive bias. The fabricated output stage of the power amplifier with the feedback through the Wilson current source shows a stable bias current with current variation from 186 mA to 182 mA for the temperature range from 25 °C to 200 °C. A bias circuit without the feedback through the Wilson current source is also fabricated for comparison and shows a strong bias current variation over temperature.
Keywords
"Power amplifiers","Temperature measurement","Heterojunction bipolar transistors","Integrated circuits","Temperature distribution","Mirrors","Current measurement"
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2015 European
Type
conf
DOI
10.1109/EuMC.2015.7346005
Filename
7346005
Link To Document