• DocumentCode
    3706287
  • Title

    New devices for computing

  • Author

    Thomas N. Theis

  • Author_Institution
    T.J. Watson Res. Center, IBM Res., Albany, OR, USA
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Leading semiconductor companies are increasing their research investment in new devices and circuit architectures with the potential to take information technology beyond the inherent limits of the field effect transistor (FET). Some of the devices explored to date, such as tunneling FETs (TFETs) based on III-V semiconductors, promise to open a new low-power design space which is inaccessible to conventional FETs. Nanomagnetic devices may allow memory and logic functions to be combined in novel ways. And newer, more promising device concepts continue to emerge. Despite the growing research investment, the landscape of promising research opportunities outside the “FET box” appears to be vast and still largely unexplored.
  • Keywords
    "Switches","Logic gates","CMOS integrated circuits","Magnetic tunneling","Magnetosphere"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348525
  • Filename
    7348525