Title :
Conduction-band tail states of thermally grown GeO2 on Ge detected by internal photoemission spectroscopy
Author :
W. F. Zhang;C. H. Lee;T. Nishimura;A. Toriumi
Author_Institution :
Department of Materials Engineering, The University of Tokyo
fDate :
6/1/2014 12:00:00 AM
Abstract :
We report the band tail states near the conduction band edge of GeO2 by the internal photoemission (IPE) spectroscopy. The band tail states depend on how to form GeO2 on Ge, and is directly related to n-channel Ge FET performance.
Keywords :
"Logic gates","Energy measurement","Photonics","Atmospheric measurements","Voltage measurement","Electric fields","Thermal conductivity"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348530
