• DocumentCode
    3706293
  • Title

    Very low EOT and high oxidation state interfacial layer in Ge MOS devices

  • Author

    Szu-Chun Yu;Kuei-Shu Chang-Liao;Mong-Chi Li;Wei-Fong Chi;Chen-Chien Li;Li-Jung Liu;Tzu-Min Lee;Yu-Wei Chang;Hsin-Kai Fang;Chung-Hao Fu;Chun-Chang Lu;Zong-Hao Ye;Tien-Ko Wang

  • Author_Institution
    Department of Engineering and System Science, National Tsing Hua University, Taiwan, R.O.C.
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The equivalent oxide thickness in Ge MOS device is scaled down to 0.39 nm, and the leakage current is decreased as well. The improvement can be attributed to the in-situ Ge sub-oxide desorption process in an ALD chamber at 370 °C. About 95% Ge4+ in HfGeOx interfacial layer are obtained by H2O plasma process together with in-situ desorption before atomic layer deposition.
  • Keywords
    "Hafnium compounds","Oxidation","Plasmas","Water","MOSFET","Leakage currents"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348531
  • Filename
    7348531
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706293