Title :
Kinetic model for scavenging of SiO2 interface layer in HfO2 gate stacks
Author :
Xiuyan Li;Takeaki Yajima;Tomonori Nishimura;Kosuke Nagashio;Akira Toriumi
Author_Institution :
Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
fDate :
6/1/2014 12:00:00 AM
Abstract :
This work discusses effects of the substrate on the scavenging of SiO2 interface layer (SiO2-IL) in HfO2 gate stacks. We propose a model that SiO2-IL scavenging occurs through the reaction of the oxygen vacancy (VO) transferred from HfO2 to SiO2 with oxygen formed at SiO2/substrate interface.
Keywords :
"Hafnium compounds","Silicon","Substrates","Logic gates","Kinetic theory","Silicon carbide","Oxidation"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348532
