Title :
Opportunity of single atom control for quantum processing in silicon and diamond
Author :
Takahiro Shinada;Prati Enrico;Syuto Tamura;Takashi Tanii;Tokuyuki Teraji;Shinobu Onoda;Takeshi Ohshima;Liam P. McGuinness;Lachlan Rogers;Boris Naydenov;Fedor Jelezko;Junichi Isoya
Author_Institution :
National Institute of Advanced Industrial Science and Technology (AIST), Japan
fDate :
6/1/2014 12:00:00 AM
Abstract :
Future CMOS will require the placement of dopants in a predetermined location, namely, a single atom control. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source beneficial to quantum processing.
Keywords :
"Silicon","Diamonds","Photonics","Transistors","Doping","Ions","Ion implantation"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348533
