Novel short-channel In0.53Ga0.47As junctionless nanowire nFET with raised s/d structure: An ultimately scaled 1-D transistor architecture

We report the first demonstration of a novel short-channel junctionless nanowire nFET with raised S/D architecture, featuring implant-free and damage-free channel formation by an anisotropic wet etch process. Devices with sub-20 nm channel length (L_CH) and sub-20 nm nanowire width (W_NW) were realized in this work. Good transfer characteristics (i.e. small subthreshold swing (SS) of 150 mV/decade) were achieved despite a large equivalent oxide thickness (EOT) of 6 nm and substrate doping of 5 × 10¹⁹ cm^-3. The In_0.53Ga_0.47As junctionless nanowire nFET shows promise for further L_CH scaling into the sub-10 nm regime.