Title :
Comparison of statistical distributions of random telegraph noise (RTN) in subthreshold region and strong inversion region
Author :
Hitoshi Ohno;Tomoko Mizutani;Takuya Saraya;Toshiro Hiramoto
Author_Institution :
Institute of Industrial Science, The University of Tokyo, Japan
fDate :
6/1/2014 12:00:00 AM
Abstract :
Statistical distributions of amplitude (ΔId) and Vth shift (ΔVth) of random telegraph noise (RTN) are analyzed by measuring 9000 transistors at various gate voltage. It is found that, while both worst ΔId and ΔVth are larger in subthreshold region than in strong inversion, median ΔVth is larger in strong inversion. The origin is discussed in terms of the percolation effect and the screening effect.
Keywords :
"Logic gates","Current measurement","Statistical distributions","Transistors","Voltage measurement","Semiconductor process modeling","Fluctuations"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348541
