Bilayer graphene single carrier transistors

In this work, we study the operation of the bilayer Graphene Single Carrier Transistor (GSCT) by varying the design of tunnel junction structures. Clear Coulomb current oscillation characteristics with the peak-to-valley ratio over 10² are achieved at 1.7 K. In addition, we observed unique double peak structures in the Coulomb oscillation at the bias voltage smaller than 5 mV and at temperature lower than 9 K. By comparing with the bilayer GSET equivalent circuit model, the observed double peak structures are attributable to single carrier tunneling via vertically stacked double charging islands.