Title :
Optimized integration processes to achieve highly stable CVD graphene FETs
Author :
Yun Ji Kim;Sangchul Lee;Young Gon Lee;Chang Goo Kang;Byoung Hun Lee
Author_Institution :
Center for Emerging Electric Devices and Systems, School of Material Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, Korea, 500-712
fDate :
6/1/2014 12:00:00 AM
Abstract :
The critical instability problem of graphene FET (GFET) has been resolved by systematically integrating multiple processes targeting to eliminate the sources of instability. As a result, hysteresis free GFETs with highest performance reported so far (>6,000cm2/Vs) has been successfully demonstrated and its stability over a month has been confirmed. Since this improvement was achieved with CVD graphene that has high density of defects, the risk of GFET in a practical application due to the device instability is greatly reduced.
Keywords :
"Graphene","Optimization","Thermal stability","Stability analysis","Charge carrier processes","Field effect transistors","Annealing"
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
DOI :
10.1109/SNW.2014.7348546
