• DocumentCode
    3706314
  • Title

    Impact of thermal treatments on the schottky barrier height reduction at the Ti-TiOx-Si interface for contact resistance reduction

  • Author

    Albert Lee;Abhijit Pethe;Amol Joshi;Guillaume Bouche;Shaoming Koh;Hiroaki Nimii;Salil Mujumdar;Zhendong Hong;Nobi Fuchigami;Ira Lim;Ashish Bodke;Mark Raymond;Paul Besser;Sean Barstow

  • Author_Institution
    Intermolecular, San Jose, CA, USA
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Metal-Insulator-Semiconductor (MIS) Schottky diodes were fabricated to study Fermi level unpinning by use of a thin TiOx insulator. For Ti-TiOx-n-Si junctions, the Schottky barrier height (SBH) was pinned due to O diffusion from TiOx into Ti during thermal anneals, as observed from XPS depth profiles. A thin AlOx barrier inserted between the Ti and the TiOx prevented O diffusion from TiOx into Ti, allowing SBH unpinning to be maintained after 450 °C anneals.
  • Keywords
    "Annealing","Tin","Silicon","Insulators","Nickel","Junctions"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348552
  • Filename
    7348552
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706314